14. SEMI CONDUCTOR ELECTRONICS : ATERIALS, DEVICES & SIMPLE CIRCUITS( Objective Question Answer 2022 )

1. Bonds in a semiconductor :
(A) trivalent
(B) covalent
(C) bivalent
(D) monovalent
Answer тЗТ B |
2. Number of electrons in the valence shell of a semiconductor is :
(A) 1
(B) 2
(C) 3
(D) 4
Answer тЗТ D |
3. Semiconductors of both p-type and n-type are produced by :
(A) ionic solids
(B) covalent solids
(C) metallic solids
(D) molecular solids
Answer тЗТ B |
4. With fall of temperature, the forbidden energy gap of a semiconductor
(A) increases
(B) decreases
(C) remains unchanged
(D) sometimes increases and sometimes decreases
Answer тЗТ C |
5. In a p-type semiconductor, current conduction is by :
(A) atoms
(B) holes
(C) electrons
(D) protons
Answer тЗТ B |
6. The relation between number of free electrons (n) in a semiconductor and temperature (T) is given by :
(A) n тИЭ T
(B) n тИЭ T2
(C) n тИЭ T1/2
(D) n тИЭ T3/2
Answer тЗТ D |
7. In reverse biasing :
(A) large amount of current flows
(B) no current flows
(C) potential barrier across junction increases
(D) depletion layer resistance increases
Answer тЗТ C |
8. Main function of a transistor is to :
(A) rectify
(B) simplify
(C) amplify
(D) all the above
Answer тЗТ C |
9. In semi conductor, at room temperature :
(A) the valence bond is partially empty and the conduction band is partially filled
(B) the valence band is completely filled and the conduction band is partially filled
(C) the valence band is completely filled
(D) the conduction band is completely empty
Answer тЗТ A |
10. Crystal diode is :
(A) amplifying device
(B) fluctuating device
(C) non-linear device
(D) linear device
Answer тЗТ C |
11. The part of a transistor which is heavily doped to produce a large number of majority carriers is :
(A) base
(B) emitter
(C) collector
(D) None of these
Answer тЗТ B |
12. A p-type semiconductor is :
(A) negatively charged
(B) positively charged
(C) uncharged
(D) None of these
Answer тЗТ C |
13. In ne, nh, nt, Nd and Na respectively denote number density of electrons, number density of holes, number density of intrinsic carriers, density of donor atoms, density of acceptor atoms in a semiconductor, we can write :
(A) nenh = ni2
(B) nenh = ni
(C) neni = nh
(D) neni = (ne + ni)nh
Answer тЗТ A |
14. Refer to previous question :
(A) ne = Nd >> nh
(B) nh = Na = ne
(C) nh = Nd + Na = ne
(D) nenh = NdNa
Answer тЗТ A |
15. The ‘device used to convertтАЬ alternating voltage/current into direct voltage/current is called :
(A) rectifier
(B) amplifier
(C) oscillator
(D) None of these
Answer тЗТ A |
16. If nh and ne are the number of holes and electrons, is an intrinsic semiconductor :
(A) nh > ne
(B) nh = ne
(C) nh > ne
(D) hh тЙа En
Answer тЗТ B |
17. Band gap in germanium and silicon is eV are :
(A) 0.78, 1.17
(B) 1.1, 0.7
(C) 11,0
(D) 0,1,1
Answer тЗТ A |
18. In a common base configuration of a transistor ┬а then; current gain in common emitter configuration of transistor will be :
(A) 49
(B) 98
(C) 4.9
(D) 24.5
Answer тЗТ A |
19. The correct relation between the two current gains тИЭ and ╬▓ in a transistor is :
Answer тЗТ C |
Class 12th physics objective question in English
S.N | Physics Objective English Medium |
1. | ┬аELECTRIC CHARGES AND FIELDS |
2. | LECTROSTATIC POTENTIAL AND CAPACITANCE |
3. | CURRENT ELECTRICITY |
4. | MOVING CHARGES AND MAGNETISM |
5. | MAGNETISM AND MATTER |
6. | ELECTROMAGNETIC INDUCTION |
7. | ALTERNATING CURRENT |
8. | ELECTROMAGNETIC WAVES |
9. | RAY OPTICS AND OPTICAL INSTRUMENTS |
10. | WAVE OPTICS |
11. | DUAL NATURE OF MATTER AND RADIATION |
12. | ATOMS |
13. | NUCLEI |
14. | SEMI CONDUCTOR ELECTRONICS┬а |
15. | COMMUNICATION SYSTEMS |